In-situ metrology for integrated crystal growth of advanced nanomaterials
With a focus on diverse applications in the electronics and display industry, we aim at developing integrated process technology for nanomaterials, like semiconducting nanowires, 2D materials and their heterostructures [1]. In order to go beyond empirical process calibrations, we systematically use in-situ metrology to reveal the mechanisms that govern the growth, interfaces and device behaviour of these nanomaterials in realistic process environments. This talk will focus on recent results [2-4] on group IV and III-V nanowire growth, revealing some of the fundamental growth mechanisms and highlighting the use of these structures as model systems to explore generic aspects of phase behaviour, nucleation and interface dynamics in nanoscale systems.
[1] Hofmann et al., J. Phys. Chem. Lett. 6, 2714 (2015).
[2] Panciera et al., Nature Materials 14, 820 (2015).
[3] Jacobsson et al. Nature 531, 317 (2016).
[4] Panciera et al. Nature Comm. 7, 12271 (2016).
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Stephan Hofmann is a Professor of Nanotechnology at the Engineering Department of the University of Cambridge, where he heads a group and large research effort on advanced nanomaterials and their device integration. He holds degrees from the Technische Universität München and the University of Cambridge. He is the recipient of an ERC Starting Independent Researcher Grant, leads large grants/consortium on CVD enabled 2D Material Technology and is co-director of the Doctoral Training Centre in Nanotechnology. Among his numerous awards is the 2014 ACS Journal of Physical Chemistry C Lectureship.
